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Preliminary Technical Information
PolarP TM
Power MOSFET
IXTH16P60P
IXTT16P60P
V DSS
I D25
R DS(on)
=
=
≤
- 600V
- 16A
720 m Ω
P-Channel Enhancement Mode
Avalanche Rated
TO-268 (IXTT)
G
S
Symbol
Test Conditions
Maximum Ratings
D (TAB)
V DSS
V DGR
V GSS
V GSM
I D25
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
T C = 25 ° C
- 600
- 600
± 20
± 30
- 16
V
V
V
V
A
TO-247 (IXTH)
I DM
I AR
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
- 48
- 16
A
A
G
D
S
D (TAB)
E AS
dV/dt
P D
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
2.5
10
460
J
V/ns
W
G = Gate
S = Source
D = Drain
TAB = Drain
T J
T JM
T stg
T L
T SOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
- 55 ... +150
150
- 55 ... +150
300
260
° C
° C
° C
° C
° C
Features:
International standard packages
Avalanche Rated
Rugged PolarP TM process
Low package inductance
M d
Weight
Mounting torque
TO-268
TO-247
(TO-247)
1.13 / 10
5
6
Nm/lb.in.
g
g
- easy to drive and to protect
Applications:
High side switching
Push-pull amplifiers
DC Choppers
Current regulators
Automatic test equipment
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Advantages:
BV DSS
V GS = 0V, I D = - 250 μ A
- 600
V
Low gate charge results in simple
drive requirement
V GS(th)
V DS = V GS , I D = - 250 μ A
- 2.5
- 4.5
V
High power density
I GSS
V GS = ± 20V, V DS = 0V
± 100 nA
Fast switching
Easy to parallel
I DSS
R DS(on)
V DS = V DSS
V GS = 0V
V GS = -10V, I D = 0.5 ? I D25 , Note 1
T J = 125 ° C
- 25 μ A
- 200 μ A
720 m Ω
? 2008 IXYS CORPORATION, All rights reserved
DS99988(5/08)
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相关代理商/技术参数
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